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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FS12UMA-5A FS12UMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS12UMA-5A OUTLINE DRAWING 10.5MAX. Dimensions in mm 4.5 3.2 7.0 1.3 16 3.6 12.5MIN. 3.8MAX. 1.0 0.8 2.54 2.54 0.5 2.6 GATE DRAIN SOURCE DRAIN G 10V DRIVE G VDSS ............................................................................... 250V G rDS (ON) (MAX) .............................................................. 0.40 G ID ......................................................................................... 12A TO-220 APPLICATION CRT Display monitor, SMPS, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 250 20 12 36 12 90 -55 ~ +150 -55 ~ +150 2.0 4.5MAX. Unit V V A A A W C C g Sep. 2001 L = 200H Typical value MITSUBISHI Nch POWER MOSFET FS12UMA-5A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.27 1.62 11.0 1200 120 30 20 30 190 45 1.5 -- Max. -- 0.1 1 4.0 0.40 2.40 -- -- -- -- -- -- -- -- 2.0 1.39 Unit V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 6A, VGS = 10V, RGEN = RGS = 50 IS = 6A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 80 tw = 10s 100s 1ms 101 7 5 3 2 60 40 100 7 5 3 2 20 TC = 25C Single Pulse DC 0 10-1 0 50 100 150 200 7 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V,10V,8V,6V TC = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 10 TC = 25C Pulse Test DRAIN CURRENT ID (A) 16 PD = 90W DRAIN CURRENT ID (A) 8 VGS = 20V,10V,8V,6V,5V 12 5V 6 4.5V 8 4 4 2 4V 0 0 2 4 6 8 10 0 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS12UMA-5A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 10 ID = 24A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 TC = 25C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 8 TC = 25C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 0.4 VGS = 10V, 20V 6 18A 0.3 4 12A 0.2 2 6A 0.1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 101 7 5 3 2 TC = 25C,75C,125C 12 8 100 7 5 3 2 VDS = 10V Pulse Test 7 100 2 3 5 7 101 2 3 57 4 0 TC = 25C VDS = 10V Pulse Test 0 4 8 12 16 20 10-1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 5 3 SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) Ciss 2 CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 3 2 102 7 5 3 Tch = 25C 2 VGS = 0V f = 1MHz 101 2 3 5 7 100 2 3 Coss td(off) tf tr td(on) Tch = 25C VGS = 10V VDD = 150V RGEN = RGS = 50 7 100 2 3 5 7 101 2 3 57 102 7 5 3 2 Crss 5 7 101 2 3 5 7 102 2 101 7 5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS12UMA-5A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VDS = 50V GATE-SOURCE VOLTAGE VGS (V) 20 16 SOURCE CURRENT IS (A) 100V 150V 32 TC = 25C 75C 125C 12 24 8 16 VGS = 0V Pulse Test 4 TCh = 25C ID = 12A 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 6A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 0 50 100 150 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch -c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 1.2 100 7 5 3 2 = 0.5 = 0.2 = 0.1 = 0.05 = 0.02 = 0.01 Single Pulse PDM tw T D= tw T 1.0 0.8 10-1 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (C) Sep. 2001 |
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